OST Photonics GaAs Wafers

GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency. The RF devices produced with GaAs substrates are commonly used in wireless communication applications, including wireless networks (WLAN), mobile communication, 4G/5G base stations, satellite communications, and WiFi communications. With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingly used for display screens and in AR/VR.

OST Photonics offer 2”, 3”, 4”, 6” gaas wafer grown by VGF/LEC technology. There are five types of GaAs materials for you to choose from: semi-insulating GaAs (undoped), N-type GaAs (Si doped), semi-insulating GaAs (Cr doped), N-type GaAs (Te doped) and P-type GaAs (Zn doped). The thickness can be customized according to your requirements. In addition, customized GaAs substrates are also available upon requests.

Application of GaAs Wafers

Wireless communication

Red light LEDs

Satellite communications

Monolithic microwave integrated circuits (MMIC) for 5G

Radio frequency integrated circuits (RFIC)

Advantages of GaAs Wafers

Direct band gap

High electron mobility

High-frequency low noise

High conversion efficiency

Ability of GaAs Wafers

Orientation:<100>

Dimension: 2”, 3”, 4”, 6”, 25x25mm, 10x10mm, 10x5mm, 5x5mm etc.

Thickness: 350 μm, 500 μm, 650 μm etc.

Available items: wafers, substrates, blanks and customized products.