OST Photonics GaAs Substrates

Gallium arsenide (GaAs) is a compound synthesized by two elements of gallium and arsenic. It is an important group IIIA and group VA compound semiconductor material. And it can be used to make microwave integrated circuits, infrared light-emitting diodes, semiconductor lasers and solar cells. GaAs is often used as the base material for the epitaxial growth of III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide, and so on.

OST Photonics offers high quality gaas substrate for researchers and industries. There are five types of GaAs materials for you to choose from: semi-insulating GaAs (undoped), N-type GaAs (Si doped), semi-insulating GaAs (Cr doped), N-type GaAs (Te doped) and P-type GaAs (Zn doped). Crystal size and thickness can be customized according to your requirements.

Application of gallium arsenide wafer

Wireless communication

Red light LEDs

Satellite communications

Monolithic microwave integrated circuits (MMIC) for 5G

Radio frequency integrated circuits (RFIC)

Advantages of GaAs Substrates

Direct band gap

High electron mobility

High-frequency low noise

High conversion efficiency

Ability of GaAs Substrates

Orientation:<100>, etc.

Dimension: 2”, 3”, 4”, 6”, 25x25mm, 10x10mm, 10x5mm, 5x5mm, etc.

Thickness: 0.35mm, 0.5mm, 0.65mm, etc.

Available items: wafers, substrates, blanks and customized optics.